document number: 94374 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 30-apr-08 1 inverter grade thyristors (hockey puk version), 515 a st303clpbf series vishay high power products features ? metal case with ceramic insulator ? all diffused design ? center amplifying gate ? guaranteed high dv/dt ? guaranteed high di/dt ? international standard ca se to-200ac (b-puk) ? high surge current capability ? low thermal impedance ? high speed performance ? lead (pb)-free ? designed and qualified for industrial level typical applications ?inverters ? choppers ? induction heating ? all types of force-commutated converters note (1) t q = 10 to 20 s for 400 to 800 v devices t q = 15 to 30 s for 1000 to 1200 v devices electrical specifications product summary i t(av) 515 a to-200ac (b-puk) rohs compliant major ratings and characteristics parameter test conditions values units i t(av) 515 a t hs 55 c i t(rms) 995 a t hs 25 c i tsm 50 hz 7950 a 60 hz 8320 i 2 t 50 hz 316 ka 2 s 60 hz 289 v drm /v rrm 400 to 1200 v t q range (1) 10 to 30 s t j - 40 to 125 c voltage ratings type number voltage code v drm /v rrm , maximum repetitive peak voltage v v rsm , maximum non-repetitive peak voltage v i drm /i rrm maximum at t j = t j maximum ma st303c..l 04 400 500 50 08 800 900 10 1000 1100 12 1200 1300
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 94374 2 revision: 30-apr-08 st303clpbf series vishay high power products inverter grade thyristors (hockey puk version), 515 a current carrying capability frequency units 50 hz 1130 950 1800 1540 5660 4990 a 400 hz 1010 820 1850 1570 2830 2420 1000 hz 680 530 1560 1300 1490 1220 2500 hz 230 140 690 510 540 390 recovery voltage v r 50 50 50 v voltage before turn-on v d v drm v drm v drm rise of on-state current di/dt 50 - - a/s heatsink temperature 40 55 40 55 40 55 c equivalent values for rc circuit 10/0.47 10/0.47 10/0.47 /f on-state conduction parameter symbol test conditions values units maximum average on-state current at heatsink temperature i t(av) 180 conduction, half sine wave double side (single side) cooled 515 (190) a 55 (85) c maximum rms on-state current i t(rms) dc at 25 c heatsink tem perature double side cooled 995 a maximum peak, one half cycle, non-repetitive surge current i tsm t = 10 ms no voltage reapplied sinusoidal half wave, initial t j = t j maximum 7950 t = 8.3 ms 8320 t = 10 ms 100 % v rrm reapplied 6690 t = 8.3 ms 7000 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 316 ka 2 s t = 8.3 ms 289 t = 10 ms 100 % v rrm reapplied 224 t = 8.3 ms 204 maximum i 2 t for fusing i 2 t t = 0.1 to 10 ms, no voltage reapplied 3160 ka 2 s maximum peak on-state voltage v tm i tm = 1255 a, t j = t j maximum, t p = 10 ms sine wave pulse 2.16 v low level value of threshold voltage v t(to)1 (16.7 % x x i t(av) < i < x i t(av) ), t j = t j maximum 1.44 high level value of threshold voltage v t(to)2 (i > x i t(av) ), t j = t j maximum 1.48 low level value of forward slope resistance r t1 (16.7 % x x i t(av) < i < x i t(av) ), t j = t j maximum 0.57 m high level value of fo rward slope resistance r t2 (i > x i t(av) ), t j = t j maximum 0.56 maximum holding current i h t j = 25 c, i t > 30 a 600 ma typical latching current i l t j = 25 c, v a = 12 v, r a = 6 , i g = 1 a 1000 180 el i tm 180 el i tm 100 s i tm
document number: 94374 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 30-apr-08 3 st303clpbf series inverter grade thyristors (hockey puk version), 515 a vishay high power products note (1) t q = 10 to 20 s for 400 to 800 v devices; t q = 15 to 30 s for 1000 to 1200 v devices switching parameter symbol test conditions values units maximum non-repetitive rate of rise of turned on current di/dt t j = t j maximum, v drm = rated v drm i tm = 2 x di/dt 1000 a/s typical delay time t d t j = 25 c, v dm = rated v drm , i tm = 50 a dc, t p = 1 s resistive load, gate pulse: 10 v, 5 source 0.83 s maximum turn-off time (1) minimum t q t j = t j maximum, i tm = 550 a, commutating di/dt = 40 a/s v r = 50 v, t p = 500 s, dv/dt: see table in device code 10 maximum 30 blocking parameter symbol test conditions values units maximum critical rate of rise of off-state voltage dv/dt t j = t j maximum, linear to 80 % v drm , higher value available on request 500 v/s maximum peak reverse and off-state leakage current i rrm , i drm t j = t j maximum, rated v drm /v rrm applied 50 ma triggering parameter symbol test conditions values units maximum peak gate power p gm t j = t j maximum, f = 50 hz, d% = 50 60 w maximum average gate power p g(av) 10 maximum peak positive gate current i gm t j = t j maximum, t p 5 ms 10 a maximum peak positive gate voltage + v gm 20 v maximum peak negative gate voltage - v gm 5 maximum dc gate currrent required to trigger i gt t j = 25 c, v a = 12 v, r a = 6 200 ma maximum dc gate voltage required to trigger v gt 3v maximum dc gate current not to trigger i gd t j = t j maximum, rated v drm applied 20 ma maximum dc gate voltage not to trigger v gd 0.25 v thermal and mechanical specifications parameter symbol test conditions values units maximum operating junction temperature range t j - 40 to 125 c maximum storage temperature range t stg - 40 to 150 maximum thermal resistanc e, junction to heatsink r thj-hs dc operation single side cooled 0.11 k/w dc operation double side cooled 0.05 maximum thermal resistance, case to heatsink r thc-hs dc operation single side cooled 0.011 dc operation double side cooled 0.005 mounting force, 10 % 9800 (1000) n (kg) approximate weight 250 g case style see dimensions - link at the end of datasheet to-200ac (b-puk)
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 94374 4 revision: 30-apr-08 st303clpbf series vishay high power products inverter grade thyristors (hockey puk version), 515 a note ? the table above shows the increment of thermal resistance r thj-hs when devices operate at diffe rent conduction angles than dc fig. 1 - current ratings characteristics fig. 2 - current ratings characteristics fig. 3 - current ratings characteristics fig. 4 - current ratings characteristics r thj-hs conduction conduction angle sinusoidal conduction rectangular conduction test conditions units single side double side single side double side 180 0.012 0.010 0.008 0.008 t j = t j maximum k/w 120 0.014 0.015 0.014 0.014 90 0.018 0.018 0.019 0.019 60 0.026 0.027 0.027 0.028 30 0.045 0.046 0.046 0.046 40 50 60 70 80 90 100 110 120 130 0 50 100150200250300350 30 60 90 120 180 average on-state current (a) conduction angle maximum allowable heatsink temperature (c) st3 0 3 c . . l se r i e s (single side cooled) r (dc) = 0.11 k/ w thj-hs 20 30 40 50 60 70 80 90 100 110 120 130 0 100 200 300 400 500 600 dc 30 60 90 120 180 average on-state current (a) conduction period maximum allowable heatsink temperature (c) st303c..l serie s (single side cooled) r (dc) = 0.11 k/ w thj-hs 30 40 50 60 70 80 90 100 110 120 130 0 100 200 300 400 500 600 700 30 60 90 120 180 average on-state current (a) conduc tion angle maximum allowable heatsink temperature (c) st3 0 3 c . . l se r i e s (double side cooled) r (dc) = 0.05 k/ w thj-hs 20 30 40 50 60 70 80 90 100 110 120 130 0 200 400 600 800 1000 1200 dc 30 60 90 120 180 average on-state current (a) conduction period maximum allowable heatsink temperature (c ) st3 0 3 c . . l se r i e s (double side cooled) r (dc) = 0.05 k/ w thj-hs
document number: 94374 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 30-apr-08 5 st303clpbf series inverter grade thyristors (hockey puk version), 515 a vishay high power products fig. 5 - on-state power loss characteristics fig. 6 - on-state power loss characteristics fig. 7 - maximum non-repetitive surge current single and double side cooled fig. 8 - maximum non-repetitive surge current single and double side cooled fig. 9 - on-state voltage drop characteristics fig. 10 - thermal impedance z thj-hs characteristics 0 200 400 600 800 1000 1200 1400 1600 1800 2000 0 100 200 300 400 500 600 700 800 180 120 90 60 30 rm s li m it conduction angle maximum average on-state power loss (w) average on-state current (a) st303c..l se ries t = 1 2 5 c j 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 0 200 400 600 800 1000 1200 dc 180 120 90 60 30 rm s li m i t conduction period maximum average on-state power loss (w) average on-state current (a) st3 0 3 c . . l se r i e s t = 1 2 5 c j 3000 3500 4000 4500 5000 5500 6000 6500 7000 110100 number of equal amplitude half cycle current pulses (n) pea k ha lf sine wa ve on-st ate curre nt (a) initial t = 125c at 60 hz 0.0083 s at 50 hz 0.0100 s j st303c..l se ries at any ra ted loa d cond ition and with rated v applied following surge. rrm 3000 3500 4000 4500 5000 5500 6000 6500 7000 7500 8000 0.01 0.1 1 pulse train duration (s) versus pulse train duration. control of conduction may not be maintained. peak half sine wave on-state current (a) in it ia l t = 125c no voltage reapplied ra t e d v re a p p l i e d rrm j st3 0 3 c . . l se r i e s maximum non repetitive surge current 100 1000 10000 012345678 t = 2 5 c j instantaneous on-state current (a) instantaneous on-state voltage (v) t = 125c j st3 0 3 c . . l se r i e s 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 sq u a r e w a v e p u l se d u r a t i o n ( s) thj-hs transient thermal impedance z (k/w) steady state value r = 0.11 k/ w (single side cooled) r = 0.05 k/ w (double side cooled) (dc operation) st3 0 3 c . . l se r i e s thj-hs thj-hs
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 94374 6 revision: 30-apr-08 st303clpbf series vishay high power products inverter grade thyristors (hockey puk version), 515 a fig. 11 - reverse recovered charge characteristics f ig. 12 - reverse recovery current characteristics fig. 13 - frequency characteristics fig. 14 - frequency characteristics 80 100 120 140 160 180 200 220 240 260 280 300 320 10 20 30 40 50 60 70 80 90 100 200 a rate of fall of on-state current - di/dt (a/s) maximum reverse rec overy charge - qrr (c) st303c..l series t = 125 c j i = 1000 a tm 500 a 300 a 100 a 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170 180 10 20 30 40 50 60 70 80 90 100 maximum reverse recovery current - irr (a) rate of fall of forward current - di/dt (a/s) 200 a st3 0 3 c . . l se r i e s t = 1 2 5 c j i = 1000 a tm 500 a 300 a 100 a 1e2 1e3 1e4 1e11e21e31e 50 hz 400 2500 100 pu lse ba se w id t h ( s) peak on-sta te current (a) 1000 1500 3000 200 500 st3 0 3 c . . l se r i e s si n u s o i d a l p u l s e t = 4 0 c c 2000 snub b e r c irc uit r = 10 o h m s c = 0.47 f v = 80% v s s d drm tp 1e1 1e2 1e3 1e4 50 hz 400 2500 100 pu l se ba se w i d t h ( s) 1000 1500 3000 200 500 st3 0 3 c . . l se r i e s si n u so i d a l p u l se t = 5 5 c c sn u b b e r c i r c u i t r = 1 0 o h m s c = 0.47 f v = 80% v s s d drm 2000 tp 1e1 1e1 1e2 1e3 1e4 1e1 1e2 1e3 1e4 50 hz 400 2500 100 1000 1500 2000 3000 200 500 pu lse ba se w id t h ( s) pe a k o n -st a t e c u r re n t ( a ) sn u b b e r c i r c u i t r = 1 0 o h m s c = 0.47 f v = 80% v s s d drm st3 0 3 c . . l se r i e s trapezoidal pulse t = 4 0 c di/dt = 50a/s c tp 1e1 1e2 1e3 1e4 50 hz 400 2500 100 pu lse ba se w i d t h ( s) 1000 1500 2000 200 500 snu b b e r c irc uit r = 1 0 o h m s c = 0.47 f v = 80% v s s d drm st3 0 3 c . . l se r i e s t rapezoidal pulse t = 55c di/dt = 50a/s c tp 3000
document number: 94374 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 30-apr-08 7 st303clpbf series inverter grade thyristors (hockey puk version), 515 a vishay high power products fig. 15 - frequency characteristics fig. 16 - maximum on-state energy power loss characteristics fig. 17 - gate characteristics 1e1 1e2 1e3 1e4 1e1 1e2 1e3 1e4 50 hz 400 2500 100 1000 1500 2000 3000 200 500 pu lse ba se w id t h ( s) pe a k o n -st a t e c urre n t ( a ) st3 0 3 c . . l se r i e s t ra p ezo id a l p ulse t = 40c d i/ d t = 100a/ s c snub b e r c irc uit r = 1 0 o h m s c = 0.47 f v = 80% v s s d drm tp 1e1 1e2 1e3 1e4 50 hz 400 2500 100 pu lse ba se w i d t h ( s) 1000 1500 2000 200 500 st303c..l series trapezoidal pulse t = 5 5 c di/dt = 100a/s c s nubber circuit r = 1 0 o h m s c = 0.47 f v = 80% v s s d drm tp 3000 1e1 1e2 1e3 1e4 1e5 1e1 1e2 1e3 1e4 pulse ba se w id t h ( s) 20 joules per pulse 2 1 0.5 10 5 peak on-st at e current (a) 3 st3 0 3 c . . l se r i e s si n u so i d a l p u l se 0.4 tp 1e11e21e31e4 pu lse ba se w id t h ( s) 20 jo ules p er p ulse 2 1 0.5 10 5 0.4 3 st3 0 3 c . . l se r i e s rectangular pulse di/dt = 50a/s tp 1e1 0.1 1 10 100 0.001 0.01 0.1 1 10 100 vgd igd (b) (a) t j=25 c t j=125 c t j=-40 c (1) (2) instantaneous gate current ( a ) instantaneous gate voltage (v) r ectangular gate pulse a) r ecommended load line for b) r ecommended load line for <=30% rated d i/ dt : 10v, 10ohms rated di/ dt : 20v, 10ohms; tr<=1 s tr<=1 s (1) p gm = 10w, tp = 20ms (2) p gm = 20w, tp = 10ms (3) p gm = 40w, t p = 5ms (4) p gm = 60w, t p = 3.3ms (3) de vi c e : s t 303c..l s eries f requency limited by pg(av) (4)
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 94374 8 revision: 30-apr-08 st303clpbf series vishay high power products inverter grade thyristors (hockey puk version), 515 a ordering information table 3 = fast-on terminals 1 - thyristor 2 - essential part number 3 - 3 = fast turn-off 4 - c = ceramic puk 5 - voltage code x 100 = v rrm 10 6 - c = puk case to-200ac (b-puk) 7 - reapplied dv/dt code (for t q test condition) 8 -t q code 9 - 0 = eyelet terminals 1 = fast-on terminals dv/dt - t q combinations available dv/dt (v/s) 20 50 100 200 400 10 12 cn dn en t q (s) 2 = eyelet terminals 11 - critical dv/dt: none = 500 v/s (standard value) l = 1000 v/s (special selection) - p = lead (pb)-free * standard part number. all other types available only on request. 15 cl dl el fl* hl fn* hn cm dm em fm hm 20 ck dk ek fk* hk 15 18 cl - - 20 ck dk ek fk* hk -- cp dp - - 25 cj dj ej fj* hj up to 800 v t q (s) only for 1000/1200 v 30 -dhehfhhh - (see voltage ratings table) (gate and auxiliary cathode unsoldered leads) (gate and auxiliary cathode unsoldered leads) (gate and auxiliary cathode soldered leads) (gate and auxiliary cathode soldered leads) device code 5 1 3 24 6 7 8 9 10 11 st 30 3 c 12 l h k 1 - p links to related documents dimensions http://www.vishay.com/doc?95076
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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